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Sunday, May 17, 2020 | History

3 edition of Growth of wide band gap II-VI compound semiconductors by physical vapor transport found in the catalog.

Growth of wide band gap II-VI compound semiconductors by physical vapor transport

Growth of wide band gap II-VI compound semiconductors by physical vapor transport

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  • 10 Currently reading

Published by National Aeronautics and Space Administration, National Technical Information Service, distributor in [Washington, DC, Springfield, Va .
Written in English

    Subjects:
  • Crystal growth.,
  • Broadband.,
  • Semiconductors (Materials),
  • Vapor deposition.,
  • Zinc sulfides.,
  • Zinc tellurides.,
  • Cadmium sulfides.,
  • Zinc selenides.

  • Edition Notes

    StatementChing-Hua Su and Yi-Gao Sha.
    Series[NASA contractor report] -- NASA-CR-204722., NASA contractor report -- NASA CR-204722.
    ContributionsSha, Yi-Gao., United States. National Aeronautics and Space Administration.
    The Physical Object
    FormatMicroform
    Pagination1 v.
    ID Numbers
    Open LibraryOL15486975M

    Nanoparticles of wide band gap II-VI compounds doped with transition metal (TM) or rare earth (RE) ions are perspective phosphor materials and fluorescence labels for optoelectronic, biology and medical applications. The efficiency of 3d-3d and 4f-4f intra-shell transitions is shown to be enhanced in TM, RE doped nanoparticles. Two mechanisms of emission enhancement related Cited by: 4. The ZnSeTe exhibits a strong defect level emission at energy close to band gap and very weak deep level emission. TEM study suggest that the interfaces are comparable to those obtained between ZnSe and GaAs. These results, combined with the new possibilities from these materials, make InP an attractive substrate for II-VI by: 4.

    AlN's key value proposition for power applications is the fact that it has the largest band gap. SiC n-type wafers to grow at 21% CAGR to $m by Driven by the SiC-based power devices market, the market for n-type SiC substrates is expected to rise at a compound annual growth rate of 21% from about $35m in to $m in   Wide-bandgap semiconductors are expected to be applied to solid-state lighting and power devices, supporting a future energy-saving society. While GaN-based white LEDs have rapidly become widespread in the lighting industry, SiC- and GaN-based power devices have not yet achieved their popular use, like GaN-based white LEDs for lighting, despite having .

    substrates creation:sublimation,vapor phase epitaxy,and high-pressure synthesis. •It is estimated that the power dissipated per-unit-area of substrate at the time of production is just one-third of that associated with SiC sublimation, due to a lower growth temperature and a higher growth Size: 2MB. We report CdTe, CdS, and ITO thin films on glass substrates for solar cell fabrication by closed space sublimation and chemical bath deposition. CdTe and CdS thin films were sublimated to chemical treatment at 25°C in a saturated CdCl2 solution ( g/ ml methanol) and heat treated at °C for 30 minutes. Indium tin oxide and tellurium films were analyzed by Author: Nazar Abbas Shah, Zamran Rabeel, Murrawat Abbas, Waqar AdilSyed.


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Growth of wide band gap II-VI compound semiconductors by physical vapor transport Download PDF EPUB FB2

Growth of wide band gap II-VI compound semiconductors by physical vapor transport Ching-Hua Su and Yi-Gao Sha I SpaceScienceLaboratory,NASMMarshallSpaceFlightCenter,Huntsville, L Introduction The studies on the crystal growth and char-acterization of II-VI wide band gap File Size: 1MB.

Get this from a library. Growth of wide band gap II-VI compound semiconductors by physical vapor transport.

[Ching-Hua Su; Yi-Gao Sha; United. II-VI semiconductor compounds are produced with epitaxy methods, like most semiconductor compounds. The substrate plays an important role for all fabrication methods.

Best growth results are obtained by substrates made from the same compound (homoepitaxy), but substrates of other semiconductors are often used to reduce the fabrication cost (a method called heteroepitaxy).

Download Citation | Wide-Bandgap II-VI Semiconductors: Growth and Properties | Wide-bandgap II–VI compounds are been applied to optoelectronic devices, especially light-emitting devices in. CRYSTAL GROWTH Journal of Crystal Growth () — North-Holland Growth of wide band gap immiscible Il—VI alloys by metalorganic vapor phase epitaxy Da-cheng Lu Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, BeijingPeople ~s Republic of China Received 28 October Although Cited by: 4.

In this respect, the growth of large II-VI single crystals with a perfect structure and controlled electric parameters is a topical problem awaiting solution.

The present work is dedicated to technological aspects of growing II-VI single crystals by means of vapor transport method in sealed chambers and their doping. The book describes developments in the crystal growth of bulk II-VI semiconductor materials.

A fundamental, systematic, and in-depth study of the physical vapor transport (PVT) growth process is. Introduction. II-VI wide-gap semiconductors such as ZnE (E = Se, Te), have recently attracted wide attention due to their technological importance for optoelectronic devices such as light-emitting-diodes, nonlinear optic-electronic components and THz spectrometer.The development of these applications and techniques seriously depends on the preparation of Author: Huanyong Li, Zhi Gu, Haiyang Zhang, Heqing Li, Li Fu.

The growth of single crystals through the vapor phase can be accomplished via a sublimation process, reaction in the gas phase and transport reaction, such in Author: R. Dhanasekaran. Wide-bandgap semiconductors (also known as WBG semiconductors or WBGSs) are semiconductor materials which have a relatively large band gap compared to conventional semiconductors.

Conventional semiconductors like silicon have a bandgap in the range of 1 - electronvolt (eV), whereas wide-bandgap materials have bandgaps in the range of 2 - 4 eV.

Get this from a library. Bulk growth of wide band gap II-VI compound semiconductors by physical vapor transport. [Ching-Hua Su; United States.

National Aeronautics and Space Administration.]. Wide-bandgap II–VI compounds are been applied to optoelectronic devices, especially light-emitting devices in the short-wavelength region of visible light, because of their direct gap and suitable bandgap energies.

Growth techniques: Spontaneous and through templates using various forms of epitaxy, such as MBE, MOCVD, physical vapor transport, aqueous solution, PLD, and magnetron sputtering. Nanowires and nanorods morphology: Control on size and shape distributions, such as flat top or pointed tips; Core-shell and other heterojunctions.

The Vapor Transport Epitaxy (VTE) thin film deposition technique for the deposition of III - V and II - VI compound semiconductors and material results are reviewed. The motivation for development of the VTE technique is the elimination of several problems common to molecular beam epitaxy/chemical beam epitaxy and metalorganic chemical vapor Author: Alexander Gurary, Gary S.

Tompa, Craig R. Nelson, Richard A. Stall, Yicheng Lu, Shaohua Liang. This volume contains the Proceedings of the NATO Advanced Research Workshop on "Growth and Optical Properties of Wide Gap II-VI Low Dimensional Semiconductors", held from 2 - 6 August in Regensburg, Federal Republic of Germany, under the auspices of the NATO International Scientific Exchange Programme.

Processing of Wide Band Gap Semiconductors. Growth, Processing and Applications Stephen J. Pearton (Eds.) Year: You can write a book review and share your experiences.

Other readers will always be interested in your opinion of the books you've read. Whether you've loved the book or not, if you give your honest and detailed thoughts. Research support for cadmium telluride crystal growth [microform]: final report, NASA grant NAG, p Growth of zinc selenide single crystals by physical vapor transport in microgravity [microform]: final Growth of wide band gap II-VI compound semiconductors by physical vapor transport [microform] / Ching-Hu.

Cadmium telluride (CdTe) is a stable crystalline compound formed from cadmium and tellurium. It is mainly used as the semiconducting material in cadmium telluride photovoltaics and an infrared optical window.

It is usually sandwiched with cadmium sulfide to form a p-n junction solar PV cell. Typically, CdTe PV cells use a n-i-p al formula: CdTe. Wide band-gap II–VI compounds—can efficient doping be achieved. Uros˘ V Desnica, Phys. Dept., R. Bos˘kovic´ Institute, Bijenic˘ka 54, Zagreb, Croatia received for publication 20 January Direct band-gap II–VI semiconductors have a potential for a variety of light-emitting devices spanning the.

Wide band gap II-VI semiconductor nanostructures have been extensively studied according to their great potentials for optoelectronic applications, while heterojunctions are fundamental elements for modern electronic and optoelectronic devices. Subsequently, a great deal of achievements in construction and optoelectronic applications of heterojunctions based on II-VI Cited by: 1.

The Bridgman and gradient freezing techniques are the most successfully used methods for growing ternary crystals with a wide range of alloy compositions. Control of heat and mass transport during the growth of ternary compounds is crucial for achieving high-quality crystals.

Melt mixing and melt replenishment methods are by: 5.Wide band gap tunability in complex transition metal oxides by site-specific substitution Woo Seok Choi, Matthew F.

Chisholm, David J. Singh, Taekjib Choi, Gerald E. Jellison, Jr. and Ho Nyung Lee* Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TNUSA. *e-mail: [email protected] ionic in ZnS while HgTe is nearly covalent. Hence, band gap for compound with more ionic character is higher than that of covalent compound.

Table II–VI semiconductors Group II B Group VI A O S Se Te Zn ZnO ZnS ZnSe ZnTe Cd CdO CdS CdSe CdTe Hg HgO HgS HgSe HgTe All II–VI semiconductors are direct band gap in Size: 1MB.